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A 0.4-V 2.4-mW 13.4-dB Ultra-Wideband Low-Noise Amplifier with Embedded Transforme
To-Po Wang1, Jing- Shiang Huang2, You-Fu Lu3

1To-Po Wang, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
2Jing-Shiang Huang, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
3You-Fu Lu, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
Manuscript received on April 10, 2014. | Revised Manuscript Received on April 12, 2014. | Manuscript published on April 18, 2014. | PP: 14-17 | Volume-1, Issue-5, April 2014.

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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: A low-voltage low-power high-gain ultrawideband (UWB) low-noise amplifier (LNA) with embedded transformers is proposed in this paper. The LNA consists of two stages, and each stage is a cascode topology. The transformer is inserted between the cascode stages for interstage impedance matching to achieve high gain. Furthermore, transformers are adopted to the common-source MOSFETs for impedance matching and supplying gate voltages. According to the proposed circuit topology, the UWB LNA has been designed in 0.18-m CMOS process. Simulated results confirm the UWB LNA combining the transformers can effectively achieve high gain of 13.4 dB, low noise figure of 3.37 dB, low LNA supply voltage of 0.4 V, and total dc power consumption of 2.4 mW.
Keywords: Interference rejection, low-noise amplifier (LNA), noise figure, notch filter.