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An Active-Balun-Based Single-In Differential-Out K-Band LNA with High Gain and Low DC Power Consumption
To-Po Wang1, Zong-Wei Li2

1To-Po Wang, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
2Zong-Wei Li, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
Manuscript received on April 10, 2014. | Revised Manuscript Received on April 12, 2014. | Manuscript published on April 18, 2014. | PP: 04-08 | Volume-1, Issue-5, April 2014.

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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: This paper presents an active-balun-based single-in differential-out K-band low-noise amplifier (LNA). The proposed active balun adopts separated dc-current paths for lowering the supply voltage and dc power, leading to the active balun with 0.6-V low supply voltage and 1.36-mW low dc power. Based on the proposed circuit architecture, the K-band LNA has been designed in 0.18- m RF CMOS process. Simulated results confirm the LNA combining the proposed low-voltage low-power active balun can effectively achieve superior overall performance in terms of gain and dc power consumption. The presented LNA combing the proposed active balun exhibits a high gain of 22.1 dB and a low dc power of 5.87 mW at 24 GHz.
Keywords: Active balun, low noise amplifier (LNA), single-in differential-out.