A High-PSAT High-OP1dB 60-GHz Power Amplifier with Miniature Marchand Balun and Non-Uniform-Offset Coupler in 90-nm CMOS
To-Po Wang1, Wei-Qing Xu2
1To-Po Wang, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
2Wei-Qing Xu, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
Manuscript received on April 10, 2014. | Revised Manuscript Received on April 12, 2014. | Manuscript published on April 18, 2014. | PP: 21-24 | Volume-1, Issue-5, April 2014.
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: A high-PSAT high-OP1dB 60-GHz power amplifier (PA) with miniature Marchand balun and non-uniform-offset 90° coupler in 90-nm CMOS is proposed in this paper. The PA is constructed with a four-way structure, and each way consists of a three-stage cascode device. In order to improve the gain, output power (Pout), and power-added efficiency (PAE), the cross-coupled pairs are adopted in this PA. Moreover, a minimized Marchand balun is proposed to minimize the circuit area. Furthermore, a non-uniform-offset 90° coupler is proposed to improve the signal imbalance. Based on these methods, a 60-GHz PA has been designed in 90-nm CMOS process. Simulated results confirm these methods applied to this PA can effectively improve the circuit performance in terms of gain, Pout, PAE, and power density (Saturated output power (PSAT)/Area).
Keywords: Output power (Pout), power amplifier (PA), power-added efficiency (PAE), saturated output power (PSAT).